2N7002, MBR NXP, DIO, VHY, ON, YET, N-Channel TrenchFET® power MOSFET, 
Enhancement Mode Field-Effect Transistor, 
Vdss 60V, Ta=25°C..300mW, Rds(on) <2Ω, 

Case type: SOT-23 3pin,
SMD/SMT Marking: 7K, K72, 702, 702W..