2SC1971 MITSUBISHI Electric, Silicon NPN Epitaxial Planar Power Transistor,
for RF power amplifiers on VHF band mobile radio applications. 
Vcbo 35V, Vce 17V, Ic 2A, Tc 25°C Ptot 12.5W, 
RF performance:
f 175MHz, Gp >10dB, η >60%, Po 6W,
Case metal: TO-39, 3pin, 
Case type: TO-220,
Marking: C1971,
1 B
2 E
3 C
4 E 
* na objednávku

4 to 5 Watt Output Power Amplifiers Applications in VHF band. 
High Power Gain: Gpe ≥ 10dB (Vcc=13.5V, Po=6W, f=175MHz)
Ability to Withstand more than 20:1 VSWR Load when Operated
at: Vcc=15.2V, Po=6W, f=175MHz