2SC2166 ISC Inchange Semiconductor, Silicon NPN RF Power Transistor, 
Vcbo 75V, Ic 4A, Tc 50°C 12.5W, hFE 35..180, 
Case type: TO-220, 

Marking: C2166, 
1 B
2 C
3 E
4 C 

High Power Gain: Gpe ≥ 13.8dB, Vcc= 12V, Po= 6W, f= 27MHz,
High Reliability and good Performances, 

Application:
3--4W Output Power Class AB Amplifier in HF Band mobile Radio Applications,