Cena za pár.
Toshiba GT35J321 Gate Bipolar Transistor Silicon N-Channel IGBT for soft switching applications, 
Vces.600V, @Tc=25°C Ic.37A, Pc.75W, 
Current Resonance Inverter Switching Applications, 
Case type GT35J321: TO-247F-ISOL, TO247F, 

Toshiba GT50N322 Gate Bipolar Transistor Silicon N-Channel IGBT, for soft switching applications, 
Vces.1000V, @Tc=25°C Ic.50A, Pc.156W, 
Voltage Resonance Inverter Switching Application. 
Case type 50N322: TO-3P-Metal, TO3P, 

Používané napríklad: 
Microwave Panasonic NN-GD366, NV-GD367, NN-GD377,