2SC1969 MITSUBISHI Electric, Silicon NPN Epitaxial Planar Power Transistor, 
High Power Gain : Gpe≥12dB, f=27MHz, P0=16W 
Vcbo 60V, Ic 6A, Tc 25°C 20W, 
Case type: TO-220, Marking: C1969, 
1 B
2 C
3 E
4 C 

RF Power amlifier on HF band mobile radio applications.
10 to 14 Watt Output Power clss AB Amplifiers Applications in HF band.
High Power Gain: Gpe ≥ 12dB (Vcc=12V, Po=16W, f=27MHz)
Ability to Withstand Infinite Load VSWR Load when Operated
at: Vcc=16V, Po=20W, f=27MHz