SANYO Electric, 2SC3399 = DTC144ES, Silicon NPN+R Epitaxial Planar Transistor, Vcbo 50V, Ic 100mA, Tc 25°C 300mW, 250MHz, Rb 47k, Rbe 47k,  Case type: TO-92S, 9c, 41c, Marking: C3399, 3399,  2SC3399 = DTC144ES, EA, EF, EL, EV, R1004, KSR1004, RN1004, UN4213, AA1L4M,  DTC144EA (ATR), DTC144EF (FTR), C144ES, DTC144ES (SPF), DTC144EV (VTR),  zobraziť podrobnosti

MBR, RoHM, C144TS = DTC144TS NPN Digital transistor (with built-in resistors).  50V, 100mA, 300mW, R..47k+0k,  Case type: TO-92S SPT  C144TS = DTC144TA (ATR), DTC144TF (FTR), DTC144TL (LTR), DTC144TS (TPF),  DTC144TV (VTR), 2SC3402, RN1002, UN4211, AA1A4M  zobraziť podrobnosti

RoHM, Philips, C144WS = DTC144WS NPN Digital transistor (with built-in resistors).  50V, 100mA, 300mW, R..47k+22k,  Case type: TO-92S SPT  C144WS = DTC144WA (ATR), DTC144WF (FTR),  zobraziť podrobnosti

FJL6920  FAIRCHILD, Silicon Transistor NPN Triple Difffused Planar,  Vcbo 1700V, Vceo 800V, Ic 20A, 200W, Case type: TO-264  Marking: J6920,  FJL6920 = J6920 FJL6920YDTU J6920 Samsung 0502001224, 0502001230, 1.Base  2.Collector  3.Emitter  zobraziť podrobnosti

AIWA HiFi, FN1016 SANKEN NPN Darlington-Transistor+Diode 160V, 8A, 70W, =D2438, TO-218-ISO, TO3P ISOL, *Limel Import.sklad-dodanie ca..3..prac.dni zobraziť podrobnosti

AIWA HiFi, FP1016 SANKEN PNP Darlington-Transistor+Diode 160V, 8A, 70W, =2SB1587, TO-218 ISOL, TO3P ISOL, *Limel Import.sklad-dodanie ca..3..prac.dni zobraziť podrobnosti

ON Semiconductor Fairchild, FQP50N06L, 50N06C,  Tranzistor N-MOSFET Vdss 60V, Id 52.4A Tc = 25°C, Ptot 121W, RDS(on)=0.022Ω,  Low gate charge (typical 31nC), Fast Switching, N-Channel QFET Mosfet, Case type: TO220AB-3PIN,  GDS  zobraziť podrobnosti

ON Semiconductor (Fairchild) FQU11P06, P-Channel QFET MOSFET, -60V, -9.4A  Low gate charge ( typical 13 nC),  Low Crss ( typical 45 pF),  Fast switching,  Case type: TO-251AA, I-PAK FQU11P06 TU I-PAK = FQD11P06 TM D-PAK zobraziť podrobnosti

FS14SM-12 Mitsubishi Electric company original Japan.  N-Channel Power MOSFET, rDS (ON) (MAX) 0.60Ω, Vdss 600V, Id 14A, Pd 250W,  High-Speed Switching Use, Case type: TO-3P 1-GATE 2-DRAIN 3-SOURCE 4-DRAIN zobraziť podrobnosti

GT346B Russia original. PNP germanium alloy high-frequency power transistor.  Vysokofrekvenčný MESA tranzistor PNP. =AF139  20V, 0.01A, 600MHz  Case tape TO-18-4pin Metal  zobraziť podrobnosti