Infineon, IRF Intern.Rectifier, IRF7309, 30V/-30V, 1.4W, Id. 4,7A/-3,5A, RDS(on) 0.05Ω/0.10Ω  Dual N and P-Channel HEXFET Power MOSFET,  Advanced Process Technology,  Ultra Low On-Resistance,  Dynamic dv/dt Rating,  Fast Switching,  Case type:  SO-8 SMD/SMT code F7309 = IRF7309PBF  zobraziť podrobnosti

Infineon, IRF Intern.Rectifier IRF7309, 30V/-30V, 2.5W, Id. 7.3A/-5.3A, RDS(on) 0.029Ω/0.058Ω  Dual N and P-Channel HEXFET Power MOSFET,  Complimentary Half Bridge,  Generation V Technology,  Ultra Low On-Resistance,  Fully Avalanche Rated,  Fast Switching,  Case type: SO-8 SMD/SMT code F7389  zobraziť podrobnosti

IR International Rectifier, STM, MBR, IRF740, IRF740PBF, 400V, 10A, 125, RDS(on)=0.50Ω  N-Channel HEXFET Power MOSFET,  Dynamic dV/dt Rating,  Advanced Process Technology,  Simple Drive Requirements,  Ease of Paralleling,  Fast Switching,  Spare part for/Náhrada pre: UF740L, UF730L, IRF730, Case type TO-220AB-3PIN 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN  zobraziť podrobnosti

STMicrolectronics, Infineon & IRectifier, IRF820, IRF820PBF, 500V, 2.5A, 50W, RDS(on)=3Ω  Single N-Channel Power MOSFET. =SiHF820, Dynamic dV/dt Rating,  Repetitive Avalanche Rated, Fast Switching, Ease of Paralleling,  Simple Drive Requirements,  Case type TO-220AB-3PIN  1 - GATE 2 - DRAIN 3 - SOURCE  zobraziť podrobnosti

Vishay Mingxin, IR, BayLinear, IRF830, 500V, 4.5A, 74W,  N-Channel Power MOSFET,  Dynamic dV/dt Rating, Repetitive Avalanche Rated,  Simple Drive Requirements, Ease of Paralleling, Fast Switching,  Spare part for/Náhrada pre: BUZ41, IRF830T, IRF820, SiHF820, IRF830PBF,  Case type TO-220AB-3PIN 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN  zobraziť podrobnosti

I&R, MBR, Vishay Mingxin, IR, BayLinear, IRF840, IRF840PBF, 500V, 8A, 125W, RDS(on)=0.85Ω  N-Channel Power MOSFET, Dynamic dV/dt Rating,  Repetitive Avalanche Rated,  Simple Drive Requirements,  Ease of Paralleling,  Fast Switching,  Spare part for/Náhrada pre: BUZ41, IRF820, IRF830, IRF830T, SiHF820, SiHF830, SiHF840,  Case type TO-220AB-3PIN,  1 - GATE  2 - DRAIN  3 - SOURCE  4 - DRAIN  zobraziť podrobnosti

Infineon, IRF Inter. Rectifier, Intersil, IRF9530N, -100V, 79W, -14A, RDS(on)=0.20Ω  Single P-Channel HEXFET Power MOSFET,  Advanced Process Technology,  Ultra Low On-Resistance,  Dynamic dv/dt Rating,  Fast Switching,  Fully Avalanche Rated,  Case type: TO-220AB-3PIN, IRFP9530N, IRF9530PBF, IRF9530, 1 - GATE  2 - DRAIN  3 - SOURCE  4 - DRAIN  zobraziť podrobnosti

IRF9540N, IR Intern.Rectifier, Infineon, Intersil, -100V, 140W, -23A, Single P-Channel HEXFET Power MOSFET, Advanced Process Technology, Ultra Low On-Resistance, Dynamic dv/dt Rating, Fast Switching, Fully Avalanche Rated, Case type TO-220AB-3PIN, IRFP9540N, IRF9534PBF, IRF9540 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN  zobraziť podrobnosti

Infineon, IRF International Rectifier, IRF9610, -200V, 20W, Id. -1.8A, RDS(on)=3.0Ω  Single P-Channel HEXFET Power MOSFET,  Ease of Paralleling,  Dynamic dv/dt Rating,  Fast Switching,  Case type: TO-220AB-3PIN, IRF9610PBF 1 - GATE  2 - DRAIN  3 - SOURCE  zobraziť podrobnosti

Fairchild Semiconductor & SEC, SFS9620, -200V, 28W, Id. -3A, RDS(on)=1.5Ω  Single P-Channel HEXFET Power MOSFET,   Advanced Rugged Technology,  Rugged Gate Oxide Technology,  Lower Input Capacitance,  Improved Gate Charge,  Low RDS(ON): 1.111Ω (Typ.)  Case type: TO-220F-3PIN-ISOL, =IRFI9620G, 1 - GATE  2 - DRAIN  3 - SOURCE  zobraziť podrobnosti