Cena za pár. Toshiba GT35J321 Gate Bipolar Transistor Silicon N-Channel IGBT for soft switching applications,  Vces.600V, @Tc=25°C Ic.37A, Pc.75W,  Current Resonance Inverter Switching Applications,  Case type GT35J321: TO-247F-ISOL, TO247F,  Toshiba GT50N322 Gate Bipolar Transistor Silicon N-Channel IGBT, for soft switching applications,  Vces.1000V, @Tc=25°C Ic.50A, Pc.156W,  Voltage Resonance Inverter Switching Application.  Case type 50N3 ... zobraziť podrobnosti

Vishay. IR-International Rectifier IRF1405, 55V, 330W, Id@Tc=25°C max.169A, RDS(on)=5.3mΩ  Single N-Channel HEXFET Power MOSFET Automotive,  Advanced Process Technology,  Ultra Low On-Resistance, Dynamic dv/dt Rating,  Fast Switching,  Case type: TO-220AB-3PIN 1 - GATE 2 - DRAIN 3 - SOURCE  zobraziť podrobnosti

IRF3205, Vishay, IR International Rectifier, 55V, 200W, Id@Tc=25°C max.110A, RDS(on)=8.0mΩ  Single N-Channel HEXFET Power MOSFET,  Advanced Process Technology,  Ultra Low On-Resistance,  Dynamic dv/dt Rating,  Fast Switching,  Case type TO-220AB-3PIN, IRF3205PBF,  1 - GATE  2 - DRAIN  3 - SOURCE  4 - DRAIN  zobraziť podrobnosti

IRF4905, IR International Rectifier, MBR, IRF4905, -55V, 200W, Id. -74A, RDS(on)=0.02Ω  Single P-Channel HEXFET Power MOSFET,  Advanced Process Technology,  Ultra Low On-Resistance,  Dynamic dv/dt Rating,  Fast Switching,   Case type TO-220AB-3PIN, IRF4205PBF,  1 - GATE  2 - DRAIN  3 - SOURCE  zobraziť podrobnosti

Infineon & IR International Rectifier IRF530N, 100V, 17A, RDS(on)=90mΩ,  Single N-Channel HEXFET Power MOSFET.  Advanced Process Technology,  Ultra Low On-Resistance,  Fast Switching,  Spare part for/Náhrada pre: IRF520..  Case type: TO-220AB-3PIN  1 - GATE 2 - DRAIN 3 - SOURCE  4 - DRAIN  zobraziť podrobnosti

Infineon & IR International Rectifier, IRF540N, 100V, Id 33A, 130W, RDS(on)=44mΩ,  Single N-Channel HEXFET Power MOSFET.  Advanced Process Technology,  Ultra Low On-Resistance,  Fast Switching,  Dynamic dv/dt Rating,  Spare part for/Náhrada pre IRF540NPBF, UF540L, IRF530, IRF520,  Case type TO-220AB-3PIN  1 - GATE  2 - DRAIN  3 - SOURCE  4 - DRAIN  (PBF, PbF = Lead Free)  zobraziť podrobnosti

Infineon & IR-International Rectifier IRF614, 250V, 36W, RDS(on)=2Ω, Id 2.70A,  N-Channel HEXFET Power MOSFET. Dynamic Dv/Dt Rating, Ease of Paralleling, Fast Switching, Case type: TO-220AB-3PIN  1 - GATE 2 - DRAIN 3 - SOURCE  zobraziť podrobnosti

ST Microelectronics, Infineon & IR, IR630, 200V, 9A, 75W, RDS(on)=0,35Ω  N-Channel Power MOSFET,  Extremely High dV/dt Capability, Fast Switching,  Very Low Intrinsic Capacitances,  Gate Charge Minimized,  Spare part for/Náhrada pre: IRF620, UF620L, UF630L, IRFS630A, IRFS630B,  Case type: TO-220AB-3PIN  1 - GATE 2 - DRAIN 3 - SOURCE  zobraziť podrobnosti

Infineon & IR-International Rectifier, IR640N, 200V, 18A, 150W, RDS(on)=0,15Ω  N-Channel HEXFET Power MOSFET,  Advanced Process Technology,  Dynamic dv/dt Rating,  Fast Switching,  Ease of Paralleling,  Spare part for/Náhrada pre: UF640L, IRF630, UF630L, IRFS630A, IRFS630B,  Case type: TO-220AB-3PIN  1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN  zobraziť podrobnosti

Vishay Mingxin, Bay Linear, IRF730, IRF730PBF, 400V, 5.5A, 74W, RDS(on)=1.0Ω  N-Channel HEXFET Power MOSFET,  Dynamic dV/dt Rating,  Advanced Process Technology,  Ease of Paralleling,  Fast Switching,  Case type: TO-220AB-3PIN  1 - GATE 2 - DRAIN 3 - SOURCE  4 - DRAIN  zobraziť podrobnosti